Position: High-Speed/mm-Wave ASICs Research Intern
Number of Position(s): 3
Duration: 10 Weeks
Date: June 2nd to Aug 8th, 2025
Location: Onsite

Education Recommendation:

Currently a candidate for a PhD in Electrical Engineering or related field in an accredited school in the USA.

You have:

Strong hands-on experience and publications in the design, layout, and testing of ultra-high-speed analog, digital, and mixed-signal integrated circuits implement in nano-scale CMOS and SiGe BiCMOS technologies. Experience in high-speed circuit simulation and characterization using Cadence Spectre, Agilent ADS, or GoldenGate and 3D EM simulators. Excellent English verbal communication and technical writing skills.

It would be nice if you also had:

Experience in system modeling and system requirement analysis using Matlab or Cadence. Experience in mm-wave testing and characterization using a network analyzer, spectrum analyzer, high-speed oscilloscope, etc.

As part of our team, you will: 

Perform leading research in the architecture, design, and characterization of ultra-high frequency (up to THz) and ultra broadband integrated circuits for wireless and wireline applications. Investigate and implement high performance integrated wireless and optical transceivers in silicon-based nano-scale semiconductor technologies. Work directly with other Bell Labs researchers to define novel architecture, perform system analysis, design high performance integrated circuits, simulate, layout and characterize state of the art IC's operating in the mm-Wave frequencies.